sop8 plastic-encapsulate mosfets CJQ4410 n-channel mosfet applications ? battery switch ? load switch maximum ratings (t a =25 unless otherwise noted) parameter symbol value units drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current (note 1) i d 7.5 pulsed drain current (10 s pulse width ) i dm 50 drain-source diode forward current (t = 10s ) (note 1) i s 1.26 a power dissipation (note 1) p d 1.4 w thermal resistance from junction to ambient (t 10s ) (note 1) r ja 89.3 /w junction temperature t j 150 storage temperature t stg -55~+150 sop8 1 of 3 sales@zpsemi.com www.zpsemi.com CJQ4410
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test co ndition min typ max unit static characteristics drain source breakdown voltage v (br)dss v gs =0v,i d =250a 30 v zero gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate body leakage l gss v ds =0v, v gs =20v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 3.0 v v gs =10v, i d =10a 13.5 drain-source on-state resistance (note 2) r ds(on ) v gs =4.5v, i d =5a 20 m ? forward transconductance (note 2) g fs v ds =15v, i d =5a s diode forward voltage (note 2) v sd i s =2.3a,v gs =0v 1.1 v dynamic characteristics (note 3) gate charge q g v ds =15v,v gs =5v,i d =10a 20 total gate charge q gt 40 gate-source charge q gs 5.5 gate-drain charge q gd v ds =15v,v gs =10v,i d =10a 3.7 nc gate resistance r g f =1mhz 0.5 2.7 ? turn-on delay time t d (on) 15 rise time t r 15 turn-off delay time t d(off) 60 fall time t f v dd =25v,r l =25 ? , i d 1a, v gen =10v,r g =6 ? 25 ns notes: 1. surface mounted on 1?1? fr4 board. 2. pulse test : pulse width 300s, duty cycle 2%. 3. guaranteed by design, not s ubject to production testing. 2 of 3 sales@zpsemi.com www.zpsemi.com CJQ4410
0123456 0 5 10 15 20 25 30 024681 0 0 10 20 30 40 01 02 03 0 0 10 20 30 40 012345 0 5 10 15 20 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 50 75 100 125 1.0 1.1 1.2 1.3 1.4 2.8v 2.5v 4.0v 3.0v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =2.0v gate to source voltage v gs (v) on-resistance r ds(on) (m ? ) i d =10a t a =25 pulsed v gs r ds(on) 20 t a =25 pulsed v gs =10v v gs =4.5v on-resistance r ds(on) (m ? ) drain current i d (a) i d r ds(on) output characteristics drain current i d (a) gate to source voltage v gs (v) v ds =5v pulsed t a =100 t a =25 transfer characteristics source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v sd i s threshold voltage v th (v) ambient temperature t a ( ) i d =250ua threshold voltage 3 of 3 sales@zpsemi.com www.zpsemi.com CJQ4410
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